多孔硅薄膜上铜微晶的形成  

Formation of Copper Microcrystals on Porous Silicon Films

作　　者：陈兰莉[1] 周甫方[2] 翟保改[2] 黄远明[2] 

机构地区：[1]南阳理工学院电子系,河南南阳473004 [2]云南师范大学物理与电子信息技术学院,云南昆明650092

出　　处：《电化学》2008年第3期284-287,共4页Journal of Electrochemistry

基　　金：国家自然科学基金(No.10674091);教育部“留学归国人员科研启动基金”(教外司留2005-546号);教育部科学技术研究重点项目(No.206110),河南省科技攻关项目(No.0624250022);河南省基础与前沿基础研究项目(No.072300410310);南阳市科技发展计划项目(No.2005PT109)资助

摘　　要：以氯化铜水溶液作电解液,在发光多孔硅薄膜表面上电沉积铜.SEM观测和计算机图像处理结果表明:电沉积之后,在多孔硅薄膜上形成了一些或实心或中空的等边三角形铜微晶,沉积后的多孔硅薄膜的分形维数从2.608降为2.252,其表面由粗糙变为光滑.与物理方法制作相比,这是一种机械强度和导电性能都更加良好的多孔硅薄膜.Microcrystals of metallic copper were electrochemically deposited onto the surface of porous silicon films in the aqueous electrolyte of copper （Ⅱ） chloride. The microstructures of electrochemically deposited copper microcrystals on the porous silicon films were characterized by using scanning electron microscopy. The results have demonstrated that both center-hollowed and center-solid equilateral triangles in the sizes of several micrometers can be formed on the smooth bed of copper microcrystals. As the deposition duration increased from 0 to 28 hours, the fractal dimensions of the porous silicon was decreased from 2.608 to 2.252, suggesting that the electrochemical deposition can smooth the rough surface of porous silicon films. Compared to the physically deposited metallic films on porous silicon, the electrochemically deposited ones have larger mechanical strength and better electrical conductivity.

关 键 词：电沉积 多孔硅 微晶 纳米材料 分形维数 

分 类 号：O484[理学—固体物理]