60%电光效率高功率激光二极管阵列  

High Power Laser Diode Array with 60% Electro-Optical Efficiency

作　　者：王俊[1] 白一鸣[2] 崇锋[1] 刘媛媛[1] 冯小明[1] 王勇刚[1] 张广泽[1] 刘素平[1] 马骁宇[1] 

机构地区：[1]中国科学院半导体研究所光电子器件国家工程中心,北京100083 [2]中国科学院半导体研究所半导体材料重点实验室,北京100083

出　　处：《中国激光》2008年第9期1323-1327,共5页Chinese Journal of Lasers

基　　金：国家自然科学基金(9140A02011406ZK03)资助项目

摘　　要：设计并制备了980 nm高量子效率和极低光损耗的激光二极管(LD)外延材料和器件。微通道封装1 cm激光二极管阵列在连续(CW)工作条件下最大电光效率达到60.0%,相应的斜率效率和输出光功率分别为1.1 W/A和38.2 W。测试得到外延材料的内损耗系数和内量子效率分别为0.58 cm-1和91.6%。测试分析表明,器件电光效率的提高主要在于新型的InGaAs/GaAsP应变补偿量子阱和大光腔结构设计。The epitaxy material and device for high quantum efficiency and small optical loss 980 nm laser diode （LD） were designed and fabricated. The maximal electro-optical conversion efficiency of the standard lcm laser bar with micro channel cooler is 60.0% under continuous-wave （CW） working condition, the corresponding slope efficiency and output power are 1.1 W/A and 38.2 W, respectively. The measured internal loss coefficiem and internal quantum efficiency are 0.58 cm^-1 and 91.6%, respectively. The result shows that the improvement of electro optical conver,sion efficiency is due to new InGaAs/GaAsP strain-compensated quantum well and the large optical cavity waveguidc structure.

关 键 词：半导体激光器 电光效率 InGaAs/GaAsP量子阱 大光腔 

分 类 号：TN218.4[电子电信—物理电子学]