包覆工艺制备多孔低介电氮化硅陶瓷的研究  

Study on the preparation of porous silicon nitride ceramics by coating processing

作　　者：胡汉军[1] 周万城[1] 李坊森[1] 罗发[1] 朱冬梅[1] 徐洁[1] 

机构地区：[1]西北工业大学,凝固技术国家重点实验室,陕西西安710072

出　　处：《功能材料》2008年第9期1480-1482,共3页Journal of Functional Materials

基　　金：国家科学自然基金资助项目(90305016)

摘　　要：以硅粉为原料,通过添加成孔剂球形颗粒,以聚乙烯醇作粘结剂,采用包覆工艺、干压成型,反应烧结制备了多孔氮化硅陶瓷,对比了包覆工艺对实验结果的影响。结果表明,采用包覆工艺较未采用包覆工艺制得的多孔氮化硅陶瓷有着更高的气孔率,宏观孔分布均匀,有较多的微孔,介电性能良好。The porous silicon nitride was prepared by reaction-bonded raw silicon powder, adding pore-forming agent and polyvinyl alcohol. The coating processing was introduced in this study before moulding of the samples. The effect of the coating processing on the porosity and pore distribution of porous silicon nitride ceramics was explored and the results show that the pore distribution of samples with coating processing is more uniform than those without coating processing. The porosity of samples with coating processing is higher than those without coating processing,leading to lower dielectic constant and lower dialectic loss for samples with coating processing.

关 键 词：包覆 多孔氮化硅 成孔剂 介电 

分 类 号：TQ174[化学工程—陶瓷工业]