脉冲电压沉积制备金属Ni纳米线阵列及磁性能  

Magnetic properties and preparation of Ni nanowires array by electrochemically deposited with pulse voltage

作　　者：姜海波[1] 胡彦杰[1] 李春忠[1] 

机构地区：[1]华东理工大学材料科学与工程学院超细材料制备与应用教育部重点实验室,上海200237

出　　处：《功能材料》2008年第9期1528-1531,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2006AA03Z358);国家自然科学基金重点资助项目(20236020);上海市重点实验室专项(05DZ22302;06DZ22008);上海市纳米科技专项资助项目(0552nm001;0652nm034)

摘　　要：以硫酸溶液为电解质，采用两步电化学阳极氧化法制备了氧化铝有序多孔膜，孔径为20nm，孔间距为50nm左右，孔洞密度为4．5×10^10个／cm2。以此多孔膜为模板，以脉冲信号为沉积电压制备了金属Ni纳米线阵列，单根纳米线直径为15～20nm，择优取向为Ni（220）晶面。磁滞回线结果表明垂直于膜面的方向为易磁化方向，当磁场垂直于膜面时，矩形比高达90．5％，矫顽力为63．84kA／m。Two steps electrochemical anodizing approach was introduced to prepare the porous aluminum oxide （AAO） in sulfuric acid solution. The SEM image shows that the pore diameter with round feature is 20nm,interpore spacing is 50nm and the pore density is 4. 5×10^10 pores/cm^2. Ordered Ni nanowires array embedded in AAO template have been fabricated by electrodepositing the Ni into the pores of AAO by pulse voltage. The results show that the preferred orientation of those nanowires with diameter of 15-20nm is crystal plane of Ni（220）. The easy magnetization axis of this system is perpendicular to the AAO membrane. When the outer magnetic field perpendicular to the membrane,the squareness is as high as 90.5% and coercivity is 63.84kA/m.

关 键 词：多孔氧化铝膜 纳米线 矩形比 矫顽力 

分 类 号：TN304.21[电子电信—物理电子学]