Monolithic Integration of a Widely Tunable Laser with SOA Using Quantum-Well Intermixing  

量子阱混杂单片集成宽可调谐激光器与半导体光放大器(英文)

作　　者：刘泓波[1] 赵玲娟[1] 阚强[1] 潘教青[1] 王路[1] 朱洪亮[1] 周帆[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《Journal of Semiconductors》2008年第9期1657-1660,共4页半导体学报（英文版）

基　　金：the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021);the State Key Development Program for Basic Research of China(Nos.2006CB604901,2006CB604902);the National High Technology Research and Development Program of China(Nos.2006AA01Z256,2007AA03Z419,2007AA03Z417)~~

摘　　要：This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.采用量子阱方法集成半导体光放大器的取样光栅可调谐激光器,这在国内尚属首次.该器件波长调谐范围可达33nm,在放大器注入50mA电流时,输出光功率可达10mW,同时边模抑制比可达35dB以上.

关 键 词：tunable laser semiconductor-optical-amplifier ion implantation quantum-well intermixing 

分 类 号：TN722[电子电信—电路与系统] TN248