Fabrication of Sub-20nm Metal Nanogaps from Nanoconnections by the Extended Proximity Effect  

拓展临近效应由纳米连接制备亚20nm金属Nanogaps(英文)

作　　者：孙艳[1] 陈鑫[1] 戴宁[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家实验室,上海200083

出　　处：《Journal of Semiconductors》2008年第9期1666-1669,共4页半导体学报（英文版）

基　　金：the National Natural Science Foundation of China(No.20704042);the Shanghai Pujiang Talent Plan(No.07PJ14095);the CAS Knowledge Innovation Program;the Committee of Science and Technology of Shanghai(Nos.06XD14020,07JC14058,0752nm016)~~

摘　　要：We describe the fabrication of metal nanogaps of sub-20nm in feature size using the proximity effect in electron beam lithography （EBL）. The proximity effect is extended to develop a flexible and practical method for preparing metal （e. g. Au or Ag） nanogaps and arrays in combination with a transfer process （e. g., deposition/lift-off）. Different from the direct gap-writing process,the nanogap precursor structures （nanoconnections） were designed by GDSII software and then written by electron beam. Following a deposition and lift-off process, the metal nanogaps were obtained and the nanogap size can be lowered to -10nm by controlling the exposure dose in EBL.描述了一种拓展电子束光刻中的临近效应来制备特征尺寸在亚20nm的金属Nanogap的方法.结合图形转移过程(如去胶等),利用临近效应灵活有效地制备了金属(如Au或者Ag等)Nanogap结构及其阵列.采用GDSII软件设计图形,以电子束光刻为手段制备Nanogap的原始纳米连接图形,然后通过去胶过程获得金属的Nanogap.另外,通过控制电子束光刻的剂量,能够把Nanogap的尺寸降低到约10nm.

关 键 词：metal nanogap nanofabrication proximity effect electron beam lithography 

分 类 号：TN304[电子电信—物理电子学]