A Planar InGaAs/InP Geiger Mode Avalanche Photodiode with Cascade Edge Breakdown Suppression  

具有抑制边缘击穿的层叠结结构的平面型InGaAs/InP盖革雪崩光电二极管的设计(英文)

作　　者：吴孟[1] 林峰[1] 杨富华[1] 曹延名[1] 

机构地区：[1]中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2008年第9期1686-1691,共6页半导体学报（英文版）

摘　　要：A Geiger mode planar InGaAs/InP avalanche photodiode （APD） with a cascade peripheral junction structure to suppress edge breakdowns is designed by finite-element analysis. The photodiode breakdown voltage is reduced to 54.3V by controlling the central junction depth, while the electric field distribution along the device central axis is controlled by adjusting doping level and thickness of the lnP field control layer. Using a cascade junction structure at the periphery of the active area, premature edge breakdowns are effectively suppressed. The simulations show that the quadra-cascade structure is a good trade-off between suppression performance and fabrication complexity, with a reduced peak electric field of 5.2 × 10^5 kV/cm and a maximum hole ionization integral of 1. 201. Work presented in this paper provides an effective way to design high performance photon counting InGaAs/InP avalanche photodiodes.通过有限元分析设计了具有抑制边缘击穿的层叠边缘结结构的平面型InGaAs/InP盖革雪崩光电二极管.通过仔细地控制中央区域结的深度,光电二极管的击穿电压降至54.3V;同时通过调整InP倍增层的掺杂浓度和厚度,沿器件中轴的电场分布也得到了控制.在有源区的边缘采用层叠pn结结构有效地抑制了过早边缘击穿现象.仿真模拟显示四层层叠结构是边缘击穿抑制效果和制造工艺复杂度的一个好的折衷方案,该结构中峰值电场强度为5.2×105kV/cm,空穴离化积分最大值为1.201.本文提供了一种设计高性能的InGaAs/InP光子计数雪崩光电二极管的有效方法.

关 键 词：Geiger mode APD edge breakdown cascade junction breakdown voltage 

分 类 号：TN312.7[电子电信—物理电子学]