超深亚微米工艺下的电路级耦合SET脉冲注入  

Coupled SET Pulse Injection in a Circuit Simulator in Ultra-Deep Submicron Technology

作　　者：刘必慰[1] 陈书明[1] 梁斌[1] 刘征[1] 

机构地区：[1]国防科技大学计算机学院,长沙410073

出　　处：《Journal of Semiconductors》2008年第9期1819-1822,共4页半导体学报（英文版）

基　　金：高等学校博士学科点专项科研基金资助项目(批准号:20079998015)~~

摘　　要：超深亚微米工艺下在电路模拟器中使用独立电流源方法的单粒子瞬态(single event transient,SET)脉冲注入与实验结果有很大误差.作者提出了一种基于二维查找表的耦合电流源注入的方法,并且基于开源的SPICE代码实现.该方法的计算结果与器件/电路混合模拟接近,而其计算时间远小于混合模拟.该法与SPICE集成,可以引入实验测量数据,适合于大规模组合电路的SET错误率分析.Single event transient （SET） pulse injection with independent current source in a circuit simulator will introduce great error. This paper presents a coupled current source method based on a two-dimensional lookup table for SET pulse injection. This method is implemented in open source SPICE code. Results of this method agree with the device/circuit mix-mode simulation,while the time cost is much smaller. This method is integrated with SPICE and experimental data can be introduced in it. It is appropriate for SET error rate analysis of large scale combinational circuits.

关 键 词：单粒子瞬态 脉冲注入 辐射效应 

分 类 号：TN405[电子电信—微电子学与固体电子学]