GaAs基E/D PHEMT技术单片集成微波开关及其逻辑控制电路  

Monolithic Integrated Switches and Logic Control Circuits with E/D-Mode GaAs PHEMTs

作　　者：黎明[1] 张海英[1] 徐静波[1] 付晓君[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2008年第9期1823-1826,共4页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:2002CB311901)~~

摘　　要：利用GaAs基E/DPHEMT技术单片集成微波开关及其逻辑控制电路的制作工艺和设计方法,采用0.8μm GaAs E/D PHEMT工艺,制备出性能良好的解码器功能内置的DC^10GHz SPDT MMIC,基本实现逻辑电路与开关电路的集成.开关电路在DC^10GHz内插入损耗小于1.6dB,隔离度大于24dB;整个电路只需要1位控制信号,有效地减少了开关电路的控制端口数目,节省了芯片面积,为GaAs多功能电路的研究奠定了基础.This paper introduces the fabrication process and circuit design method for microwave monolithic integrated GaAs PHEMT switches and logic control circuits. Using 0.8μm GaAs E/D PHEMT technology,an integrated SPDT switch MMIC is fabricated. In the DC- 10GHz, the insertion loss is less than 1.6dB, and the isolation is greater than 24dB. The logic circuits are integrated with the switch circuit successfully. The whole circuit only needs one control signal for voltage, reducing the port number of control circuit switches and saving chip area.

关 键 词：增强/耗尽型PHEMT 逻辑控制电路 单刀双掷开关(SPDT) 反相器 

分 类 号：TN454[电子电信—微电子学与固体电子学]