非晶纳米晶带材巨磁阻抗磁传感器特性分析  

Characteristic analysis of giant magneto-impedance sensor in amorphous-nanocrystalline film

作　　者：柴秀丽[1] 曾德长[1] 刘桂雄[1] 余红雅[1] 钟喜春[1] 刘文洁[1] 

机构地区：[1]华南理工大学机械工程学院,广东广州510640

出　　处：《传感器与微系统》2008年第9期63-65,共3页Transducer and Microsystem Technologies

基　　金：广东省科技计划资助项目(2007B010600043);广东省自然科学基金资助项目(C013003;0530030)

摘　　要：利用非晶纳米晶带材的巨磁阻抗(GMI)效应制备一种磁传感器,在输出最大值的特定频率下,研究与带材轴线平行和垂直方向磁场的输出特性。研究表明:在10.5 MHz附近的激励频率作用下,传感器输出取得最大值;传感器对平行磁场有一段高灵敏的线性工作区间,对垂直磁场不响应;纳米晶带材GMI磁传感器的灵敏度高达0.6691 V/Oe,优于非晶带材制备器件的灵敏度0.1483 V/Oe。An amorphous-nanocrystalline film giant magneto-impedance （GM1） magnetic sensor is prepared. The parallel and vertical field character to the axis of the film is also researched under the condition of certain frequency. The experiment results indicate that the output voltage is the maximum when the frequency is around 10.5 MHz. The sensor responds linearly to the parallel field and does not respond to the vertical one. The nanoerystalline film GMI sensor has the sensitivity of 0. 6691 V/Oe and is higher than the sensitivity of 0. 1483 V/ Oe of the amorphous film sensor.

关 键 词：非晶纳米晶带材 巨磁阻抗效懂 磁传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]