立式冷壁反应器中化学气相淀积TiN涂层 Ⅰ.淀积参数对反应速率和涂层质量的影响  

Chemical Vapor Deposition of TiN Coating in Cold-Wall Reactor Ⅰ.Effects of Deposition Parameters on Reaction Rate and Film Qualities

作　　者：丁平[1] 盛明慧[1] 丛德滋 韩杰[1] 陈良恒[1] 袁渭康[1] 

机构地区：[1]华东化工学院联合化学反应工程研究所技术化学物理研究室

出　　处：《华东化工学院学报》1990年第3期255-260,共6页

基　　金：中国自然科学基金

摘　　要：在立式冷壁CVD反应器中,用TiCl_4-H_2N_2和TiCl_4-H_2N_2-Ar为反应物源,在YT15硬质合金刀片上淀积TiN涂层。研究了淀积参数对淀积薄膜质量和淀积速率的影响。得到的TiN_x涂层外观光洁,呈金黄色,x为0.8～1.6,淀积速率15～60m^(-6)/h,显微硬度1800～2200HV,淀积反应为扩散过程控制;表观活化能为46.5kJ/mol。实验表明,TiN在冷壁反应器中的淀积速率远大于在热壁反应器中的淀积速率。The effects of process parameters on deposition rate and coating qualities of TiN on WC-Co-TiC substrate by chemical vapor deposition were studied over a wide range of process variables. The deposition was carried out in a vertical cold-wall reactor under atmospheric pressure. Golden coloured TiN coating was obtained at about 975℃ TiCl_4 partial pressure, 0.75～1.5 kPa; N_2/H_2, 1.0; flow velocity, 0.4～1.0m^(-2)s; deposition rate, 15～60 m^(-6)/h and microhardness, 1800～2200 HV. The dependence of deposition rate on temperature has been found to be well represented by Arrhenius law; activation energy for TiN coating is 46.5 kJ/mol. The deposition rate of TiN in the cold-wall reactor is ten times greater than that in the hot-wall reactor.

关 键 词：化学气相淀积 氮化钛 涂层 反应器 

分 类 号：O614.411[理学—无机化学]