酞菁铜(CuPc)薄膜器件的制备及其电双稳特性  

Fabrication of Thin Film Device with Copper Phthalocyanine Active Layer and Its Electrical Bistability

作　　者：李训栓[1] 彭应全[1] 宋长安[1] 杨青森[1] 赵明[1] 袁建挺[1] 王宏[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《真空科学与技术学报》2008年第5期394-398,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：一些无机半导体器件和许多有机薄膜器件都具有电双稳特性。通过对CuPc有机薄膜器件的I-V曲线的分析,说明CuPc薄膜器件具有明显的电双稳特性。研究了膜厚对器件I-V特性的影响,结果表明CuPc膜厚达到750 nm器件才表现出明显的电双稳特性,此时跳变电压为7.51 V。Ag底电极器件的转变电压(9.6 V)与ITO底电极器件的转变电压(7.47 V)不同,简要分析了造成这种区别的原因。并对器件电双稳态特性的形成机理进行了解释。t The thin film devices, with copper phthalocyanine （CuPc） used as the active layer, were fabricated. The influence of the film growth conditions, including film thickness, mierostructures and morphology, on the electrical bi-stability of the CuPc films and on I-V characteristics of the device were studied. The results show that a critical CuPc film thickness significantly affects its electrical bi-stability. For instance, the CuPe film, with a thickness over 750 nm, displays pronounced bi-stable effect;and the switching voltage of the device was found to be 7.51 V. In contrast, the switching voltages of the devices,fabricated with Ag and indium tin oxide （/TO） as the bottom electrodes, are 9.6 V and 7.47 V, respectively. Possible reasons behind the differences and the mechanisms responsible for the bistable effect of the device were also tentatively discussed.

关 键 词：I-V曲线 电双稳特性 转变电压 

分 类 号：O482.4[理学—固体物理]