Si纳米线的生长机制及其研究进展  

Latest Progress in Growth of Silicon Nanowire and Growth Mechanisms

作　　者：彭英才[1,2] X.W.Zhao 范志东[1] 白振华[1] 

机构地区：[1]河北大学电子信息工程学院,保定071002 [2]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [3]Department of Physics,Tokyo University of Science,Tokyo 162-8601,Japan [4]中国科学院微电子学研究所纳米材料与纳米器件实验室,北京100029

出　　处：《真空科学与技术学报》2008年第5期429-436,共8页Chinese Journal of Vacuum Science and Technology

摘　　要：Si纳米线及其阵列是近年内新发展起来的准一维半导体光电信息材料,在场效应器件、单电子存储器件、光探测器件、场发射器件、纳米传感器件和高效率发光器件以及集成技术中具有潜在的应用。本文以气-液-固(VLS)生长机制为主线,介绍与评论了近5年来Si纳米线在制备与合成技术方面所取得的一些最新进展。其主要内容包括Si纳米线的各种金属催化生长和氧化物辅助生长,最后指出了今后该研究的发展方向。The latest progress in the growth technologies of silicon nano-wire, growth in vapor-liquid-solid（VLS） phases in particular, and its growth mechanisms were tentatively reviewed. Discussions centered on the favorable properties, including the novel electrical, optical and magnetic properties, and the potential applications of Si nanowires and Si nano-wires arrays, as the quasi one dimensional semi-conducting optoelectronic materials, in fabrication of devices, such as the field effect devices, single electron memory devices, photo-detection devices, field emission devices, nano-meter sensors and high efficient, light-emittiong devices, as well as the integration technology. Besides, the latest growth technologies of Si nano-wires, such as the metal-catalytic growth（Au,Fe,and Al） ,and its oxide-assisted growth based on VSL mechanism were introduced and reviewed. The scenarios of the silicon nanowire research and development were also predicted.

关 键 词：SI纳米线 气-液-固生长 金属催化生长 氧化物辅助生长 光电器件应用 

分 类 号：TN304.1[电子电信—物理电子学]