双源注入机中消除二次电子对束流测量影响的新方法  

EFFECT OF DECREASING SECOND ELECTRON UPON ION CURRENT MEASUREMENT ON DOUBLE SOURCE IMPLANTER

作　　者：郭希铭[1] 李毅[1] 叶维 

机构地区：[1]天津师范大学物理系

出　　处：《天津师大学报（自然科学版）》1997年第3期27-31,共5页

基　　金：天津市科委重点学科资助项目

摘　　要：在离子注入技术中，获得准确注入剂量的关键是如何消除二次电子对束流测量带来的影响．通过实验证实了二次电子对正离子束的影响．采用了在靶室内加入侧向正电场的方法。In ion implantation, the key for getting accurate quantity of implant ion current is how to decrease the second electron affect caused by the implant ion current measurement. In this paper we confirm the effect of second electron on positive ion current through the experiment. The problem which ion current could not be accurately measured was validly resolved, by applying side positive electric field in target Lab.

关 键 词：二次电子 束流测量 法拉第筒 双源离了注入机 

分 类 号：TN305.3[电子电信—物理电子学]