Ca^(2+)掺杂对PTCR元件电性能的影响  

EFFECT OF Ca 2+ DOPED ON ELECTRONIC PROPERTY OF PTCR THERMORESISTORS

作　　者：章天金[1,2] 何昌鑫 周东祥[1,2] 龚树萍 

机构地区：[1]湖北大学物理系 [2]华中理工大学固体电子学系

出　　处：《湖北大学学报（自然科学版）》1997年第3期236-240,共5页Journal of Hubei University：Natural Science

基　　金：湖北省科委自然科学基金

摘　　要：研究了Ｃａ２＋取代Ｂａ２＋后对ＰＴＣＲ材料电性能的影响，发现随着Ｃａ２＋含量的增加，ＢａＴｉＯ３系ＰＴＣＲ样品的平均晶粒直径单调下降，耐电压性能单调上升．Ｃａ２＋取代量在一定范围内，常温电阻率变化不大，但超过一定值后，常温电阻率急剧上升．这种现象与晶界缓冲效应有关．It is studied that the effect of Ca 2+ substitute for Ba 2+ on electronic property of PTCR thermoresistors. It is found that the average diameter of BaTiO 3 series PTCR component decrease and breakdown voltage increase with Ca 2+ content increasing. When the replacement content is less than 8 % (mol/mol), the specific resistance at room temperature varies little, but if the content is more than 12 % (mol/mol), the specific resistance increases rapidly. This phenomenon is related to the effect of grainbroundary buffer.

关 键 词：电性能 半导体陶瓷 钙离子 掺杂 PTCR元件 

分 类 号：TN304.82[电子电信—物理电子学]