减反射膜与外腔半导体激光器调谐范围  

Dependence of antireflection coating on tuning range of external cavity semiconductor lasers

作　　者：周小红[1] 陈建国[1] 李义峰 李大义[1] 卢玉村[1] 韩松[1] 

机构地区：[1]四川联合大学

出　　处：《半导体光电》1997年第6期400-404,413,共6页Semiconductor Optoelectronics

摘　　要：由于镀了减反射膜的半导体激光二极管端面的反射曲线的谱宽有限，而且，增益峰值波长随载流子密度的变化，因而实际上起作用的反射率通常都比能测到的最低反射率高，在腔内可建立的载流子密度的上限比预期的低。在考虑了这些因素后，计算了用这种管子作外腔半导体激光器（ＥＣＬＤ）的增益介质时。:Due to a finite spectral width of the reflectivity curve at the AR coated diode facet,the effective reflectivity that takes effect at the coated facet is generally higher than the claimed minimum reflectivity.This means that the upper bound of the carrier density,which can be established inside the cavity of the AR diode,is lower than anticipated one.In this work,the tuning range of an external cavity semiconductor laser using AR coated diode as the gain medium has been calculated.

关 键 词：减反射膜 半导体激光器 外腔 调谐范围 

分 类 号：TN248.4[电子电信—物理电子学]