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作 者:文小明[1] 谢崇伟[1] 林理忠[1] 崔永杰[2]
机构地区:[1]云南大学物理系,昆明650091 [2]云南省分析测试中心,昆明650031
出 处:《中国激光》1997年第12期1129-1133,共5页Chinese Journal of Lasers
摘 要:黄色V_2O_5在一定能量密度紫外激光的作用下.导电性能发生了显著的变化,从原来的绝缘体转变为半导体,同时表面颜色也发生了变化.利用X射线衍射、X射线光电子能谱及显微镜等多种测试方法进行了分析比较,确定了该过程是由于短脉冲的准分子激光作用,造成了V_2O_5的快速升温熔化和快速冷凝重构.引起了化学配比偏离原先组份.即非化学配比所致.When a yellow pcntoxide vanadium sample is explored to a proper fluence excimer laser, its electric conductivity changes remarkably. So, it changes from an insulator to a semiconductor, besides its color changes too. The pentoxidc vanadium sample, before and after being acted, is analysed with the X-ray diffraction (XRD) , X-ray photoclectronic spectrum (XPS), and microscopy. It can be determined that the procedure takes place because the proper flucncc excimer laser illuminates the surface of the pentoxide vanadium sample, the temperature on the surface rises quickly, and a thin layer of the illuminated area is molten and then resolidifies quickly, which leads to the chemical ratios change of the sample surface.
分 类 号:TN248.22[电子电信—物理电子学]
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