从全量子理论看在半导体中实现无反转增益的一个可能方案  

Analysis of full quantum mechanism on possibility for realization of optical gain without population inversion in semiconductor

作　　者：郭九苓[1] 王舒民[1] 郭长志[1] 陈水莲[2] 

机构地区：[1]北京大学 [2]清华大学

出　　处：《半导体光电》1997年第5期312-318,共7页Semiconductor Optoelectronics

基　　金：国家自然科学基金

摘　　要：从全量子理论出发，比较深入地分析了在Ⅱ类半导体量子阱中实现无反转增益过程的物理机制，量子阱层导带Γ－能谷和势垒层导带Ｘ－能谷混合形成的量子相干法诺态的能谱结构，及其对光吸收几率的法诺量子干涉效应，法诺态的能谱结构和真空场量子起伏引起的自发辐射对受激光增益过程的影响，为利用这种机理制成半导体量子阱无反转激光器提供理论依据。Based on full quantum mechanical theory,physical mechanism is systematically analyzed for realization of optical gain without population inversion in type-Ⅱ semiconductor quantum well,as well as spectrum of coherent Fano states composed of Γ -valley in the well layer conduction band and X -valley in barrier layer conduction band.The effect of this physical mechanism on Fano quantum interference of optical absorption probabitity is presented,followed by description of the impact of spontaneous emisson resulted from Fano spectrum structure and quantum fluctuation in vacuum field on excited optical gain.The mechanism affords theoretical foundation for the development of semiconductor quantum well laser without population inversion.

关 键 词：半导体激光器 无反转增益 半导体量子阱 

分 类 号：TN302[电子电信—物理电子学] TN248.4