镀膜法获得的超辐射发光二极管的特性分析  

Characteristics analysis of superluminescent diodes with anti-reflection coating

作　　者：陈建国[1] 周小红[1] 李大义[1] 卢玉村[1] 

机构地区：[1]四川大学

出　　处：《半导体光电》1997年第5期319-322,共4页Semiconductor Optoelectronics

摘　　要：在考虑了反射率与波长有关这一基本事实后，用图示方法对由镀膜法获得的超辐射发光二极管（ＳＬＤ）的特性进行了分析。结果表明：在判定减反射膜镀得好与不好的时候，最低反射处波长控制的准确性与最低反射率本身的大小都很重要；同时，也可以看到单面镀膜的ＳＬＤ振荡波长与增益峰值波长不重合的现象。Taking wavelength-dependent reflectivity into account,graphical analysis is made on the characteristics of superluminescent diodes manufactured by means of AR coating.Results indicate that for judging the effectiveness of AR coating,accurate control of the wavelength at minimun reflection and minimum reflectivity itself are almost of the same importance.Meanwhile oscillation with lasing wavelength different from the peak wavelength of the gain is predicted for one-facet AR coated superluminescent diodes.

关 键 词：发光二极管 减反射膜 反射率 镀膜法 SLD 

分 类 号：TN383.058[电子电信—物理电子学]