Nd∶GdVO_4晶体的生长与性能  

Growth and properties of Nd∶GdVO 4 crystals

作　　者：陈庆汉[1] 张志斌[1] 黄晋蓉[1] 周庆模 霍玉晶[2] 

机构地区：[1]西南技术物理研究所 [2]清华大学电子工程系

出　　处：《激光技术》1997年第6期339-342,共4页Laser Technology

摘　　要：报道了在Ｎ２＋Ｈｅ（３０％～５０％Ｖｏｌ）气氛中用提拉法成功地生长了Ｎｄ∶ＧｄＶＯ４晶体。激光实验中，ＬＤ泵浦功率为３５０ｍＷ，采用端泵方式获得波长为１０６０ｎｍ的激光输出，ＴＥＭ００基模方式运行，阈值泵浦功率为９５ｍＷ，输出功率为１３ｍＷ，斜效率为５％。Nd∶GdVO 4 crystal is a laser crystal pumped by laser diodes.This paper reports the growing procedure and the properties of the crystal.We employed CZ method to grow the crystal at the condition of growing atmosphere of N 2+He(30%～50%Vol) and add 0.5% of the component V 2O 5 over the burden calculation and modify technological procedure to correct the loss of volatile of V 2O 5.Using end pumped by laser diode of pumped power 370mW,we have achieved the 13mW CW laser output power of Nd∶GdVO 4 laser,operating at TEM 00 mode and near 1060nm wavelength with 5% slop efficiency.The threshold pump power of the laser is 95mW.

关 键 词：晶体生长 提拉法 激光二极管泵浦 激光晶体 

分 类 号：TN244[电子电信—物理电子学] TN245