ECLD激光器三种模型的调谐特性比较  

Tuning Characteristics Comparison of Three ECLD Models

作　　者：黄立平[1] 潘炜[2] 

机构地区：[1]青海民族学院电子工程与信息科学系,西宁810007 [2]西南交通大学信息科学与技术学院,成都610031

出　　处：《半导体技术》2008年第8期645-648,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(10174057;90201011);教育部科学技术研究重点项目(105148);高等学校博士学科点专项科研基金(20070613058)

摘　　要：为了研究频率偏离增益峰值时光栅外腔半导体激光器的阈值特性,在以往研究双稳态的原简化模型的基础上,将H参量引入到载流子密度中,建立了H参量简化模型和H参量模型,并得到了计算调谐范围的解析式;采用数值计算和模拟的方法,在阈值载流子密度按波长的分布图谱中得到激光器的调谐范围,比较了三种模型在表达调谐特性方面的差异。结果表明:新的两种模型能够从阈值载流子密度图谱中反映更多的调谐特性,H参量模型较H简化模型精确了一个二极管模式的间隔。To study the threshold characteristics of ECLD when frequency deviating from gain of peak based on the prior simplified model, H parameter model and simplified model were established by introducing the H parameter into carrier density, an analytical expression for the tuning range has been derived. The tuning range of ECLD was derived from the change of carrier density with wave length by using the numerical calculation and imitation, and the difference in three models has been contrasted. The result show that two new models can reflect more of tuning characteristics in threshold carrier density, and the H parameter model makes the interval of diode mode more exact than H parameter simplified model.

关 键 词：激光技术 H参量模型 H参量简化模型 阈值载流子密度 调谐范围 

分 类 号：TN248[电子电信—物理电子学]