纳米硅表面与界面的扫描隧道显微镜研究  

Surface and Interface of Nanocrystalline Silicon Studied by Scanning Tunneling Microscope

作　　者：高聚宁[1] 杨海强 刘宁[1] 时东霞 江月山 薛增泉 庞世谨 何宇亮[1] 

机构地区：[1]中科院北京真空物理开放实验室,北京航空航天大学非晶态物理实验室

出　　处：《电子显微学报》1997年第6期751-754,共4页Journal of Chinese Electron Microscopy Society

摘　　要：本文应用扫描隧道显微镜（ＳＴＭ），对使用等离子体增强化学气相沉积法（ＰＥＣＶＤ）制备的纳米硅（ｎｃ－Ｓｉ：Ｈ）薄膜进行了研究，得到颗粒上以及颗粒间界的原子结构图像，从图像上可以得出：（１）纳米硅薄膜是由许多不同大小的颗粒所组成。这些颗粒同时又是由更小的微颗粒所组成。（２）微颗粒的表面及界面原子排列可以分为四种形式；环状结构，线状结构，网状结构以及完全无规的随机排列。（３）观察到环状结构不仅存在于界面，而且普遍存在于微颗粒的表面。本文从机理上对以上各结构的生成机理进行了初步的讨论。The scanning tunneling microscope (STM) has been employed to study the morphology,atomic surface structures,and grain interfaces of hydrogenated nanocrystalline silicon(ncSi:H).It was found that the films were composed of many different size grains and the grains were composed of many fine grains.The atomic structures of fine grains and their boundaries were investigated.Three kinds of atomic structures were observed:(1)Loop structures,this kind of structure was found on the grain surfaces and at the grain boundaries,but the loop structures found at the grain boundaries is bigger and more irregular than those on the grain surfaces.(2) Line structures,this structure is similar to the crystal silicon,but the distance between lines is different.(3) Amorphous structures.The formation mechanism of these atomic structures were discussed.

关 键 词：微电子材料 纳米硅 扫描隧道显微镜 原子结构 

分 类 号：TN304.12[电子电信—物理电子学] O48[理学—固体物理]