大功率半导体激光器步进加速老化研究  

Reliability of High Power Semiconductor Laser Diodes

作　　者：王德宏[1] 李雅静[1] 安振峰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第9期508-511,共4页Micronanoelectronic Technology

摘　　要：介绍了半导体激光器寿命测试的理论依据,给出了由电流应力决定的寿命测试的数学模型,据此对AlGaInAs/AlGaAs/GaAs 808nm大功率半导体激光器进行常温电流步进加速老化实验。由步进加速老化的理论依据及数学模型推算出了步进加速寿命实验时间折算公式,利用步进加速寿命实验时间折算公式推算出了器件在额定应力条件下工作的寿命结果;根据实验后器件的失效模式分析,与恒定应力加速老化方式下的实验结果相对比分析,确认该步进加速实验方法可以适用于半导体激光器的加速老化。The theory of laser diode life testing and the mathematic modal of life testing on current stress were introduced. Accelerated aging tests were carried out under the conditions of the current step stress at room temperature for 808 nm high power AlGaInAs/AlGaAs/GaAs laser. According to the theory and the mathematic model of the life testing, the time conversion formula of the accelerated aging tests was achieved. Based on the mean lifetimes of the laser diodes under the conditions of the current step stress, the mean lifetimes of lasers at rated stress was figured out. In addition, based on the analysis of the test failure mode and compared with the accelerated aging test of constant stress, it is confirmed that the stepping accelerated test method can be applied to the accelerated aging of semiconductor laser.

关 键 词：大功率半导体激光器 电流步进 加速老化 寿命 失效模式 

分 类 号：TN248.4[电子电信—物理电子学] TN306