超低压ESD保护器件设计与工艺研究  

The Study of Ultra-low Voltage Protection Device ESD Design and Process

作　　者：淮永进[1] 韩郑生[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《固体电子学研究与进展》2008年第3期445-448,共4页Research & Progress of SSE

摘　　要：介绍了一种新颖的超低压保护器件的工作原理、结构特点,并进行了器件结构模拟。结合理论分析与模拟仿真得到超低压1.8～5 V的ESD保护器件系列模型。经过设计与工艺验证,制作出了非常吻合模拟结果的超低压器件,该系列器件具有工作电压低、电容小、漏电小的特点。由于采用新型复合型穿通结构及单片低温减压外延工艺,器件的电参数一致性非常理想,在高速数据线的保护电路中成功地得到应用。This paper introduces the work protection device, and the structure simulation. principle and structure of new ultra-low voltage By the theory analysis and simulation, we get the 1.8-5 V ultra-low voltage ESD protection device models. After design and process validation, we manufacture the ultra-low voltage protection device having very similar results to the simula- tion. This device＇s main specialties are： low working voltage, low capacitance and low leakage. As the devices adopt new complex punch-through structure, low temperature and low pressure epitaxial technology, the electricial parameters have perfect consistent. In the high speed data line protection circuit, the device is successful used.

关 键 词：超低压保护器件 静电放电 模拟 复合型穿通结构 瞬态电压抑制器 

分 类 号：TN315.2[电子电信—物理电子学]