N485封接合金阳极帽高温湿氢氧化性能研究  

Study on the Performance of Anode Button Made of N485 Alloy in High Temperature Wet Hydrogen

作　　者：张卫红[1] 王晓芳[1] 

机构地区：[1]咸阳师范学院化学系,陕西咸阳712000

出　　处：《真空电子技术》2008年第4期32-34,共3页Vacuum Electronics

摘　　要：对N485封接合金为原料的彩色显像管玻壳阳极帽的进行了湿氢氧化特性研究,采用SEM和EDS技术对不同氧化条件下所生成的合金氧化层组成及其微观形貌进行表征分析,探讨了高频模拟封接炉检验各条件下阳极帽氧化层的封接性能及耐烧性能。结果表明,在一定范围内,氧化膜中Cr2O3含量随氧化温度的升高和时间的延长而升高,同时其耐烧性及封接浸润性得到增强。The performance of CRT anode button made of N485 sealing alloy in wet hydrogen was studied. SEM and EDS techniques were used to analyze the composition and microstructure of anode button＇s oxide film. The sealing and heat-resistant performance of oxide film was studied with high-frequency sealing simulator. It is shown that the content of Cr2O3 will increase and the capability of sealing and heat-resistance will be improved when oxidizing temperature and time are increased at a certain extent.

关 键 词：阳极帽 封接合金 湿氢 氧化膜 

分 类 号：TB756[一般工业技术—真空技术]