超导SIS结偏置源电路的设计  

The design of bias source based on SIS

作　　者：刘天飞[1] 康琳[1] 姚骑均[2] 吉争鸣[1] 

机构地区：[1]南京大学超导微电子学实验室,南京210093 [2]中国科学院紫金山天文台,南京210093

出　　处：《低温与超导》2008年第9期36-39,共4页Cryogenics and Superconductivity

摘　　要：针对超导SIS隧道结器件的传输特性,设计和制备了为超导SIS器件提供直流偏置的电路,该偏置源电路采用恒压源与恒流源合二为一的技术,恒压源采用了电压深度负反馈设计,恒流源采用了电流反馈法。并用MULTISIM10对电路进行仿真和参数验证。利用该偏置源对SIS结进行供电实测,取得了良好效果。实现了高稳定度、高精度、低噪声的电路设计。This paper introduced a design and fabrication of DC bias circuit with constant voltage and constant current source for superconducting tunnel junction devices （SIS）. A deep voltage negative feedback and current negative feedback were used in this bias circuit to realize constant voltage or constant current, respectively. The circuit was simulated using the MULTISIM10. Superconducting SIS junction was measured by this bias source, revealing the excellent properties with a high stability, high accuracy and low- noise.

关 键 词：偏置源 深度负反馈 超导SIS器件 电路设计 

分 类 号：TN721.2[电子电信—电路与系统] TN402