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作 者:王朋伟[1] 单旭东[1] 章新政[1] 俞大鹏[1]
机构地区:[1]北京大学物理学院,介观物理国家重点实验室,电子显微镜实验室,北京100871
出 处:《电子显微学报》2008年第4期261-265,共5页Journal of Chinese Electron Microscopy Society
基 金:国家自然科学基金资助项目(Nos.90606023,10574003,20731160012)~~
摘 要:用化学气相沉积法在管式炉中制备了SnO2掺Ag纳米线。纳米线直径约50 nm,长几十微米。通过XRD、TEM和Raman谱仪等测量确定SnO2掺Ag纳米线为金红石型结构,XPS谱表明样品中含有Sn、O和Ag元素,Ag的浓度约为1.8 at.%,室温PL谱显示样品在626nm处有很强的红光发射峰。Ag doped SnO2 nanowires were synthesised by chemical vapor deposition (CVD) method in a typical horizontal tube furnace. The diameter and length of these nanowires were about 50 nanometers and tens of micrometers, respectively. XRD, TEM and Raman spectroscopy results showed that these nanowires were rutile SnO2 sturcture. XPS spectrum revealed that these nanowires consisted of Sn, O and Ag elements, and the concentrate of Ag was about 1.8 at. %. PL spectra showed that the products exhibited a strong red-light emission at about 626 nm.
分 类 号:TB383.1[一般工业技术—材料科学与工程]
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