基于CMOS图像传感器应用的斜坡发生器  

A ramp generator designed for CMOS image sensor

作　　者：张生才[1] 龚川[1] 姚素英[1] 徐江涛[1] 

机构地区：[1]天津大学专用集成电路设计中心,天津300072

出　　处：《哈尔滨工业大学学报》2008年第7期1148-1151,共4页Journal of Harbin Institute of Technology

基　　金：天津市重点科技攻关基金资助项目(033183911)

摘　　要：基于CMOS图像传感器应用,针对列并行的单斜模数转换器设计了一种内在精度高、分辨率可调的斜坡发生器IP核.在建立数学模型的基础上,通过改变参考电压实现分辨率在8bits与10bits之间可调.在3.3V电源电压、10MHz采样时钟下,平均功耗为2.288mw;8位分辨率时最大微分非线性和积分非线性分别为0.12LSB和0.32LSB;10位分辨率时微分非线性<0.38LSB,积分非线性<0.54LSB,满足百万像素阵列数据处理要求.整体CMOS图像传感器芯片采用Chartered 0.35 μm CMOS工艺实现,斜坡发生器所占有效面积仅为150×112μm2.An intrinsic accuracy, adjustable resolution ramp generator IP core designed for the column single-slope ADC in a CMOS image sensor is presented. Based on a mathematical model, the adjustable resolution between 8bits and 10bits is implemented by changing the reference voltage. At a single voltage supply of 3.3 V and a clock speed of 10 MHz, the average power consumption is 2.288 mw, the DNL and INL are better than 0.12 LSB and 0.32 LSB for an 8 bits resolution and less than 0.38 LSB and 0.54 LSB for a 10 bits resolution, and the ramp generator can achieve requirements of a CMOS image sensor with mega pixels array. The chip is implemented in the Chartered 0.35 μm CMOS process, and the ramp generator occupies only 150×112 μm^2 of the die area.

关 键 词：CMOS图像传感器 斜坡发生器 内在精度 可调分辨率 列并行单斜模数转换器 

分 类 号：TN72[电子电信—电路与系统]