Ni离子注入四面体非晶碳(ta-C)膜微观结构研究  

Microstructural study on tetrahedral amorphous carbon (ta-C) film implanted with Ni ions

作　　者：覃礼钊[1] 廖斌[1] 吴正龙[2] 张旭[1] 刘安东[1] 

机构地区：[1]北京师范大学低能核物理研究所 [2]北京师范大学分析测试中心,北京100875

出　　处：《真空》2008年第5期49-53,共5页Vacuum

基　　金：遵义市科技局;遵义师范学院科技研发资金(批准号:00709)支持。

摘　　要：高内应力是阻碍高性能超硬四面体非晶碳(tetrahedral amorphous carbon,ta-C)膜长厚和广泛应用的主要因素。为降低ta-C膜内应力,本文采用金属蒸汽真空弧(metal vapor vacuum arc,MEVVA)离子源注入技术,注入Ni离子到用磁过滤阴极真空弧(filtered cathodic vacuumarc,FCVA)沉积的ta-C膜中,制备出掺Ni膜(ta-C:Ni膜)。用XPS、XRD、Raman谱和SEM表征膜的微观结构。结果显示,膜sp3含量减小,发生了石墨化,石墨颗粒细化;Ni在膜中以单质Ni的形式存在,并且有Ni纳米晶体析出;膜表面均匀分布约10nm颗粒。对膜在结构上的变化作了讨论。The main factor that hinders the high-quality superhard tetrahedral amorphous carbon （ta-C） films to grow thicker and to be used wider is the high internal compressive stress. To reduce the internal stress, the metal vapor vacuum arc （MEVVA） ion implantation technique was used, by which the Ni ions were implanted into the as-deposited ta-C film deposited by filtered cathodic vacuum arc （FCVA） process. XPS, XRD, Raman spectroscopy and SEM were employed to investigate the microstructure of the films. The results showed that the sp^3 content of Ni-doped film decreases, ie., there exists a graphitization and the graphite panicle size in the film becomes smaller, while the Ni nanocrystals are found in singlet state and have been precipitated in the film. The particles about 10nm are distributed uniformly on the surface of the film. The change in the microstrncture of the film due to Ni ion implantation is discussed.

关 键 词：Ni离子注入 四面体非晶碳(ta—C)膜 MEVVA源 微观结构 

分 类 号：TB332[一般工业技术—材料科学与工程]