中频磁控溅射周期性变电流(Ti，Al)N多层薄膜的结构与性能  

Microstructure and Properties in(Ti, Al)N Multilayer Films Deposited by MF-Magnetron Sputtering on Periodical Target Current Condition

作　　者：罗庆洪[1] 孙丽丽[1] 杨会生[1] 王燕斌[1] 陆永浩[1] 于栋利[2] 

机构地区：[1]北京科技大学材料物理与化学系,北京100083 [2]燕山大学材料科学与工程学院,河北066004

出　　处：《现代科学仪器》2008年第4期97-101,共5页Modern Scientific Instruments

摘　　要：使用独特的镶拼矩形TiAl靶,用中频反应磁控溅射方法,采用周期性改变靶电流的方法在高速钢(W18C14V)基体上沉积了(Ti,Al)N多层薄膜。利用场发射扫描电镜、纳米硬度仪和X射线衍射仪等方法研究了(Ti,Al)N多层薄膜组织结构、硬度和膜基结合性能。结果表明,制备的(Ti,Al)N多层薄膜硬度略低于20GPa,弹性模量均大于230GPa,薄膜的临界载荷均大于50N;多层薄膜有一定的择优取向,且择优取向随着靶电流周期性的改变而有所变化。同时发现,(Ti,Al)N多层薄膜硬度是结构、界面和择优取向共同作用的结果。The （ Ti,Al） N multilayer films were deposited on high speed steel substrates with a MF （ medium frequency ） - reactive magnetron sputtering system using unique mosaic rectangular TiAl target on periodical target current condition N multilayer films were ray diffraction （XRD）, The microstructure, microhardness and interfacial strength of film -substrate of （Ti,Al） subsequently studied with Field emission scanning electron microscopy （ FE - SEM）, X - Nano - indenter. The results showed that the microhardness of （Ti,Al） N muhilayer films were slightly less than 20GPa, elastic modulus were more than 230GPa and critical load were above 50N; （Ti,Al ） N multilayer films showed preferred orientation of crystals and the preferred orientation of （ Ti,Al） N multilayer films vary with periodical target current condition. The hardness of （ Ti,Al） N multilayer films results from microstructure, Interface and preferred orientation of crystals.

关 键 词：显微结构 中频反应磁控溅射 (Ti Al)N多层薄膜 

分 类 号：TB383.2[一般工业技术—材料科学与工程]