电磁脉冲对GaAs LNA损伤及其分析  

Electrocmagnetic Pulse Damage on GaAs LNA and Its Analysis

作　　者：李用兵[1] 王海龙[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]中国电子科技集团公司第二十九研究所,成都610036

出　　处：《半导体技术》2008年第10期899-901,共3页Semiconductor Technology

基　　金：国家自然科学基金重点项目(50237040)

摘　　要：介绍了电磁脉冲对GaAs低噪声放大器(LNA)损伤机理和损伤模式。利用特定电磁脉冲信号对其进行损伤,通过开帽内部目检、扫描电镜等失效手段和方法,针对该低噪声放大器在电磁脉冲实验中损伤机理及损伤模式进行了分析与讨论。实验表明,GaAs低噪声放大器的可靠性问题主要表现为有源器件、无源器件和环境因素等引入损伤退化,主要失效部位表现为有源器件,指出了对GaAs器件加固的一些措施,对器件设计者和使用者具有一定的参考意义。The damage mechanisms and damage mode of electromagnetic pulse on GaAs LNA （low noise amplifier） were introduced. The LNA was damaged by special electromagnetic pulse single, some damage mechanisms and damage mode were analyzed and discussed through interior inspection after opening cap and SEM under electromagnetic pulse test conditions. The results show that the degradation and damage of GaAs LNA are related to active and passive parts and environments, mainly failure locates in active parts of GaAs LNA. Some reinforcing methods on GaAs devices are given. It provides some references to designer and users of this sort of device.

关 键 词：低噪声放大器 电磁脉冲 损伤试验 软损伤机理 

分 类 号：TN22[电子电信—物理电子学] TN306