金刚石薄膜紫外光探测器电流—电压特性的研究  

Effects of the Grain Size on the Current-Voltage Characteristics of Diamond Film Ultraviolet Photodetectors

作　　者：唐可[1] 王林军[1] 黄健[1] 马莹[1] 胡广[1] 祝雪丰[1] 夏义本[1] 

机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200072

出　　处：《电子器件》2008年第5期1405-1408,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60577040);上海市重点学科资助(T0101)

摘　　要：采用热丝化学气相沉积(HFCVD)法制备了1.8μm、2.5μm和3.1μm三种晶粒尺寸的金刚石薄膜,并制作了共平面光电导探测器。采用光学显微镜和拉曼光谱仪研究了薄膜的结构和表面形貌。电流—电压(I-V)特性测试结果表明,探测器性能与金刚石薄膜晶粒大小密切相关,随着晶粒尺寸的增加,光电流/暗电流之比以及净光电流均提高。Diamond films with different grain sizes from 1.8 μm to 3. 1 μm were prepared using the bias-en- hanced hot filament chemical vapor deposition （HFCVD） technique. The film structure and morphology were characterized using the optic microscope and Raman spectrometer. I-V measurement results showed that the performance of the detector was related to the grain size of the diamond film. With increasing the grain size, the photocurrent, the ratio of photocurrent to dark current and the net photocurrent all in- creased. The above results indicate that diamond films with larger grain size are more suitable for being fabricated as semiconductor detectors.

关 键 词：金刚石薄膜 紫外光探测器 晶粒尺寸 电学性能 

分 类 号：TL814[核科学技术—核技术及应用]