胶体硒化镉量子点的荧光时间分辨谱研究  

Size-Dependent Time-Resolved Photoluminescence of Colloidal CdSe Quantum Dots

作　　者：沈里[1] 陈定安[1] 张家雨[1] 梁大顺[1] 崔一平[1] 

机构地区：[1]东南大学先进光子学中心,南京210096

出　　处：《电子器件》2008年第5期1409-1412,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助项目(90401024)

摘　　要：使用化学胶体法合成了12个高质量、不同尺寸的胶体硒化镉量子点。测量了样品的时间分辨光致发光谱、TEM谱,同时测量并计算了样品的光致发光量子产率以及光致发光寿命。研究结果表明:硒化镉量子点的光辐射强度与表面相关的光辐射强度均由量子点的表面缺陷形式决定,并且也决定了光致发光量子产率、光致发光寿命。量子点的表面缺陷形式决定于尺寸,在量子点的生长过程中存在的表面的优化/重构也依赖于尺寸。Twelve high quality colloidal CdSe quantum dots with different sizes were synthesized. The timeresolved photoluminescence and TEM images were measured, and the photoluminescence quantum yields and lifetimes were calculated. The results indicated that surface-related emission was influenced by the quality of surface, and it determined the photoluminescence quantum yields and lifetimes. The quality of the surface and the surface optimization/reconstruction had the identical size-dependence.

关 键 词：半导体量子点 发光动力学 寿命 表面 

分 类 号：TB383[一般工业技术—材料科学与工程]