快速稳定的CMOS电荷泵电路的设计(英文)  

A Fast-Settling CMOS Charge Pump

作　　者：曹寒梅[1] 杨银堂[1] 陆铁军[2] 王宗民[2] 蔡伟[2] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071 [2]北京微电子技术研究所,北京100076

出　　处：《电子器件》2008年第5期1475-1478,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目资助(60476046)(60876009)

摘　　要：基于交叉耦合NMOS单元,提出了一种低压、快速稳定的CMOS电荷泵电路。一个二极管连接的NMOS管与自举电容相并联,对电路进行预充电,从而改善了电荷泵电路的稳定建立特性。PMOS串联开关用于将信号传输到下一级。仿真结果表明,4级电荷泵的最大输出电压为7.41V,建立时间为0.85μs。A low-voltage fast-settling charge pump is proposed. In this charge pump, a cross-connected NMOS cell is used as the basic element. The settling-time is improved with the use of a diode-connected NMOS transistor which is parallel to the pump capacitor. PMOS serial switches are employed to transfer the charges from one stage to the next. According to the simulation results,the maximum output voltage of a 4-stage proposed charge pump is 7. 41 V,the settling-time is 0. 85 μs which is relatively smaller than its counterparts.

关 键 词：电荷泵 快速建立 CMOS 

分 类 号：TN432.1[电子电信—微电子学与固体电子学]