Effect of roughness and wettability of silicon wafer in cavitation erosion  

作　　者：JIANG NaNa LIU ShiHan CHEN DaRong 

机构地区：[1]State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China

出　　处：《Chinese Science Bulletin》2008年第18期2879-2885,共7页

基　　金：the National Natural Science Foundation of China (Grant Nos. 50475018, 50675112 and 50505020)

摘　　要：Material damage of silicon wafer with different roughness and wettability was investigated by using the self-made vibration cavitation apparatus in de-ionized water. Various roughness and wettability of sili- con wafer were achieved by changing their morphology and depositing Au, diamond-like carbon films (DLC films) on them. Surface morphology was observed with a scanning electron microscope (SEM) and a surface profilometer, and wettability was characterized by the contact angle measurement. The cavitation erosion results showed that many tiny pits and cracks appeared on the wafer surface as a result of brittle fractures; the number and size of the pits and cracks increased with experiment time, which made material flake away finally; cavitation occurred more easily on the silicon wafer surface with the augment of roughness or contact angle by changing surface morphology or depositing Au, DLC thin film on it, which consequently aggravated cavitation damage.Material damage of silicon wafer with different roughness and wettability was investigated by using the self-made vibration cavitation apparatus in de-ionized water. Various roughness and wettability of silicon wafer were achieved by changing their morphology and depositing Au, diamond-like carbon films （DLC films） on them. Surface morphology was observed with a scanning electron microscope （SEM） and a surface profilometer, and wettability was characterized by the contact angle measurement. The cavitation erosion results showed that many tiny pits and cracks appeared on the wafer surface as a result of brittle fractures; the number and size of the pits and cracks increased with experiment time, which made material flake away finally; cavitation occurred more easily on the silicon wafer surface with the augment of roughness or contact angle by changing surface morphology or depositing Au, DLC thin film on it, which consequently aggravated cavitation damage.

关 键 词：气蚀 粗糙度 硅 可湿度 

分 类 号：P5[天文地球—地质学]