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机构地区:[1]华中理工大学物理系
出 处:《华中理工大学学报》1990年第4期141-144,共4页Journal of Huazhong University of Science and Technology
摘 要:本文用正电子湮没寿命方法研究了形变纯铜缺陷产生的特点及其运动规律,讨论了位错密度和形变量之间的关系以及正电子寿命方法研究形变缺陷的适用范围。对试样所作的TEM观测得到与正电子寿命方法定性一致的结果。The defects of deformed pure copper are studied by the positron annihilation technique. The relationship between the density of dislocation and deformation, and the occurrence, mobility and interaction of the dislocations, vacancy clusters and microvoids in the samples during deformation are discussed. The applicable range of the positron lifetime study method has been analyzed. Results concerning TEM experiments on the samples are in agreement qualitatively with those obtained by the positron annihilation method.
分 类 号:TG146.11[一般工业技术—材料科学与工程]
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