计算机辅助硅膜片的应变与应力分析  

A Computer-Aided Analysis of Stress and Strain on a Silicon Diaphragm

作　　者：李乃平[1] 刘三清[1] 于军[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《华中理工大学学报》1990年第5期161-164,共4页Journal of Huazhong University of Science and Technology

基　　金：国家自然科学基金

摘　　要：膜片式半导体压力传感器是一种以形变引起硅材料电阻率发生变化为原理而制成的器件,因此正确认识硅弹性形变膜片上的应力和应变分布情况是合理布局应变电阻条的前提。根据硅的晶体结构并利用各向异性腐蚀剂,可以较方便地获得周边固定的矩形和方形形变膜片。本文用计算机模拟出应变和应力在这些膜面上的变化规律。A good understanding of the stress and strain distribution on an elas-tically deformed diaphragm is of importance to the optimal design of a diaphragm type pressure sensor. Computer simulation has been made to study respectively the distribution of the direct stress, shearing stress, direct strain and shearing strain on rectangular and square silicon diaphragms. It has been found that computer-aided programming can not only give a quick and clear picture of the properties and magnitudes of the stress and strain and the effect of diaphragm geometry on them, but also makes possible their observation and display from different angles.

关 键 词：压力传感器 硅 膜片 应力 应变 

分 类 号：TN304.12[电子电信—物理电子学]