Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing  

作　　者：刘泓波 赵玲娟 潘教青 朱洪亮 周帆 王宝军 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083

出　　处：《Chinese Physics Letters》2008年第10期3670-3672,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 90401025, 60736036, 60706009, 60777021, the National Basic Research Programme of China under Grant Nos 2006CB604901 and 2006CB604902, and the National High-Tech Research and Development Programme of China under Grant Nos 2006AA01Z256, 2007AA03Z419, and 2007AA03Z417.

摘　　要：We present the monolithic integration of a sampled-grating distributed Bragg reflector （SG-DBR） laser with a quantum-well electroabsorption modulator （QW-EAM） by combining ultra-low-pressure （55 mbar） selectivearea-growth （SAG） metal-organic chemical vapour deposition （MOCVD） and quantum-well intermixing （QWI） for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V.We present the monolithic integration of a sampled-grating distributed Bragg reflector （SG-DBR） laser with a quantum-well electroabsorption modulator （QW-EAM） by combining ultra-low-pressure （55 mbar） selectivearea-growth （SAG） metal-organic chemical vapour deposition （MOCVD） and quantum-well intermixing （QWI） for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V.

关 键 词：the power-law exponents precipitation durative abrupt precipitation change 

分 类 号：TN492[电子电信—微电子学与固体电子学]