短波长OEIC光接收机前端设计及制作  

Design and Fabrication of Short Wavelength Monolithically Integrated Optical Receiver Front End

作　　者：范超[1,2] 陈堂胜[2] 陈辰[2] 焦世龙[1,2] 陈镇龙[1] 刘霖[1] 王昱琳[1] 叶玉堂[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054 [2]单片集成电路与模块国家级重点实验室,南京210016

出　　处：《微电子学》2008年第5期713-717,共5页Microelectronics

基　　金：单片集成电路与模块国家级重点实验室基金资助项目(9140C1406020708)

摘　　要：基于国内的材料和工艺技术,研制出850nm单片集成光接收机前端,集成形式包括PIN/TIA、PIN/DA、MSM/TIA和MSM/DA等。对光探测器和电路分别进行了研究和优化。通过Silvaco软件,建立了探测器器件模型,并通过实验数据验证。分布放大器-3dB带宽接近20GHz,跨阻增益约46dBΩ,输入、输出驻波比均小于2,噪声系数在3.03～6.5dB之间。跨阻前置放大器-3dB带宽接近10GHz,跨阻增益约43dBΩ,输入、输出驻波比均小于3.5,噪声系数在4～6.5dB之间。集成芯片最高工作速率达到5Gb/s。An 850 nm monolithically integrated optical receiver front-end, including PIN/TIA, PIN/DA, MSM/ TIA and MSM/DA, was developed based on domestic material and technology. The photodiode and photo-detector circuit were studied and optimized, respectively. A photodiode model was established by using Silvaeo software and verified by experimental data. The distributed amplifier achieved a -3 dB bandwidth of about 20 GHz and a transimpedance gain of 46 dBΩ. Both input and output voltage standing wave ratios （VSWR）were less than 2 and the noise figure （NF）varied from 3.03 dB to 6.5 dB. The transimpedance amplifier had a -3 dB bandwidth of about 10 GHz and a transimpedance gain of 43 dBΩ. The VSWR were less than 3.5 and NF varied from 3.03 dB to 6.5 dB. Eye diagrams of the optical receiver were measured at a bit rate up to 5 Gb/s.

关 键 词：光电集成电路 光接收机前端 PIN 金属-半导体-金属 跨阻放大器 分布参数放大器 

分 类 号：TN43[电子电信—微电子学与固体电子学]