机构地区:[1]Chemical Engineering Department, Taiyuan University of Technology, Taiyuan 030024, China [2]Key Laboratory of Interface and Engineering in Advanced Materials of Ministry of Education of China, Taiyuan University of Technology, Taiyuan 030024, China
出 处:《Chinese Science Bulletin》2008年第19期2964-2972,共9页
基 金:Supported by the National Natural Science Foundation of China (Grant Nos. 20776091 and 90306014)
摘 要:Titania-silica (TS) nanocomposite powder with three different composite structures, containing 10―30 mol% SiO2 in each structure, have been prepared by sol-gel processes. The surface characteristics of these titania-silica samples have been investigated by X-ray photo-emission spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). The study for all TS oxides annealed at 773 and 1173 K showed: an abnormal surface enrichment in Si increased with increasing annealing temperature; the Ti3+, Ti2+, Si3+ and Si2+ oxides coexisted with Ti4+ and Si4+ oxides, and the contents of these Ti/Si suboxides increased with increasing SiO2 content and annealing temperature; there was a layer rich in O on the topmost surface and the excess O could be attributed to the chemadsorption of H2O; different composite structures could lead to different contents of Ti/Si suboxides. These results indi- cated that the surface of TS oxide powder derived by sol-gel process was a double layer with enriched O first and then SiOx/TiOy (x, y<2). Ti/Si suboxides could result from the thermal diffusion of Ti4+ and Si4+, which might be induced by the strong interaction between Ti4+ and Si4+.Titania-silica (TS) nanocomposite powder with three different composite structures, containing 10-30 mol% SiO2 in each structure, have been prepared by sol-gel processes. The surface characteristics of these titania-silica samples have been investigated by X-ray photo-emission spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). The study for all TS oxides annealed at 773 and 1173 K showed: an abnormal surface enrichment in Si increased with increasing annealing temperature; the Ti^3+, Ti^2+, Si^3+ and Si^2+ oxides coexisted with Ti^4+ and Si^4+ oxides, and the contents of these Ti/Si suboxides increased with increasing SiO2 content and annealing temperature; there was a layer rich in O on the topmost surface and the excess O could be attributed to the chem-adsorption of H2O; different composite structures could lead to different contents of Ti/Si suboxides. These results indicated that the surface of TS oxide powder derived by sol-gel process was a double layer with enriched O first and then SiOx/TiOy(x, y〈2). Ti/Si suboxides could result from the thermal diffusion of Ti^4+ and Si^4+, which might be induced by the strong interaction between Ti^4+ and Si^4+.
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