The effect of annealing temperature and film thicknesson the phase of pentacene on the p^+-Si substrate  

作　　者：袁广才 徐征 赵谡玲 张福俊 黄金昭 黄金英 田雪雁 徐叙瑢 

机构地区：[1]Institute of Optoelectronic Technology, Beijing Jiaotong University [2]ChinaKey Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education

出　　处：《Chinese Physics B》2008年第10期3822-3826,共5页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program (863 plan) of China (Grant No2006AA03Z0412);the National Natural Science Foundation of China (Grant Nos 60576016 and 10774013);the Excellent Doctor’s Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024);The Research Fund forthe Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031);the Beijing NOVA program (GrantNo 2007A024);the Project Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry;the Foundation of Beijing Jiaotong University (Grant No 2005SM057)

摘　　要：This paper investigates the morphology and crystallization properties of the two crystalline phases of pentacene grown by thermal evaporation on p^＋-Si substrates at room temperature by the methods of atomic force microscopy and x-ray diffraction. This kind of substrate induces a thin film phase and a triclinic phase which are formed directly onto p^＋-Si substrates and constitute a layer consisting of faceted grains with a step height between terraces of 15.8A（1A=0.1 nm） and 14.9A, respectively. Above the critical thickness of the thin film phase, lamellar structures are found with an increasing fraction with the increase of the film thickness. When the film thickness is fixed, the fraction of lamellar structures increases with the increase of annealing temperature. These lamellar structures are identified as the second phase with a interplanar distance of 14.9A corresponding to the pentacene triclinic phase. Furthermore, the thin film phase consisting of several micrometre sized uniformly oriented grains at an annealing temperature of less than 80℃ and a deposition rate of 0.6A/s is observed.This paper investigates the morphology and crystallization properties of the two crystalline phases of pentacene grown by thermal evaporation on p^＋-Si substrates at room temperature by the methods of atomic force microscopy and x-ray diffraction. This kind of substrate induces a thin film phase and a triclinic phase which are formed directly onto p^＋-Si substrates and constitute a layer consisting of faceted grains with a step height between terraces of 15.8A（1A=0.1 nm） and 14.9A, respectively. Above the critical thickness of the thin film phase, lamellar structures are found with an increasing fraction with the increase of the film thickness. When the film thickness is fixed, the fraction of lamellar structures increases with the increase of annealing temperature. These lamellar structures are identified as the second phase with a interplanar distance of 14.9A corresponding to the pentacene triclinic phase. Furthermore, the thin film phase consisting of several micrometre sized uniformly oriented grains at an annealing temperature of less than 80℃ and a deposition rate of 0.6A/s is observed.

关 键 词：PENTACENE MORPHOLOGY crystalline phase thin-film transistors 

分 类 号：O484.1[理学—固体物理]