基于铁磁金属纳米点接触结构的全金属逻辑电路  

An all-metallic logic gate based on a ferromagnetic metal nanocontact

作　　者：杨海方[1] 徐鹏[1] 唐令[1] 李俊杰[1] 夏钶[1] 顾长志[1] 

机构地区：[1]中国科学院物理研究所北京凝聚态物理国家实验室,北京100190

出　　处：《物理》2008年第10期691-696,共6页Physics

基　　金：国家自然科学基金(批准号:90406024-1);国家重点基础研究发展计划(批准号:2006CB933000;2006AA03Z402);中国科学院知识创新工程资助项目

摘　　要：电流在铁磁金属中可以用来驱动磁畴壁,从而可以进行信息的读写.然而,具体如何在器件中实现并不清楚.文章作者利用纳米加工技术制作出铁磁金属纳米点接触结构和逻辑电路,并对纳米结构中畴壁的输运性质和逻辑电路特性进行了研究.发现了铁磁纳米点接触结构在电流驱动下存在的高阻态及低阻态,通过设计不同形状的点接触结构,用电学测量方法验证了畴壁在自旋极化电流作用下的移动方向与电流方向的关系.并基于电流控制点接触电阻变化的结果,制作出能够实现逻辑"非"功能的全金属逻辑电路,实现了电路的电信号驱动和利用电信号的检测功能.The domain wall in ferromagnetic materials can be driven by an electric current, and the information written and read out through the current. However, how to realize such functions in realistic devices is not clear yet. Using electron beam lithography and the lift-off technique we have successfully fabricated ferromagnetic metal nanocontacts and all-metallic logical gates, and have studied the spin-dependent electron transport properties of the nanoeontacts as well as the performance of the gates. The domain wall can be pinned at the contact position and pushed away by the reflection of spin-polarized electrons, with the direction of the domain wall motion determined by the specific structural design. Based on our analysis of the properties of the nanocontact domain wall we have designed and fabricated an all-metallic logic gate, which can perform a logical NOT operation very well.

关 键 词：畴壁电阻 自旋电子输运 纳米点接触 全金属逻辑电路 

分 类 号：TN791[电子电信—电路与系统]