Growth of SiGe by D-UHV/CVD at Low Temperature  

D-UHV/VCD系统中SiGe薄膜的低温生长(英文)

作　　者：曾玉刚[1] 韩根全[1] 余金中[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《Journal of Semiconductors》2008年第10期1889-1892,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60336010);国家重点基础研究发展计划(批准号:G2000036605)资助项目~~

摘　　要：The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10 ^-5 Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.生长温度对SiGe合金的性能有重要影响.在双腔超高真空化学气相淀积生长中,通常采用液氮冷却的方法.该生长模式下,通入乙硅烷时腔内的生长气压约为10-5Pa,SiGe的最低生长温度约为550℃.为了降低生长温度,文中采用了不用液氮冷却的模式,腔内生长气压约为10-2Pa,增加3个数量级,并且将生长温度降到了485℃,远低于传统的生长温度.DCXRD测试和TEM图像表明,生长的SiGe薄膜和SiGe/Si超晶格具有良好的晶格质量.结果证明,在UHV/CVD系统中,这是一种有效的实现SiGe低温生长的方法.

关 键 词：SIGE D-UHV/CVD low-temperature deposition DCXRD 

分 类 号：TN304.055[电子电信—物理电子学]