A Piecewise Curvature-Corrected CMOS Bandgap Reference with Negative Feedback  

具有负反馈的分段曲率校正CMOS带隙基准源(英文)

作　　者：李景虎[1] 王永生[1] 喻明艳[1] 叶以正[1] 

机构地区：[1]哈尔滨工业大学微电子中心,哈尔滨150001

出　　处：《Journal of Semiconductors》2008年第10期1974-1979,共6页半导体学报（英文版）

摘　　要：A piecewise curvature-corrected bandgap reference （BGR） with negative feedback is proposed. It features employing a temperature-dependent resistor ratio technique to get a piecewise corrected current, which corrects the nonlinear temperature dependence of the first-order BGR. The piecewise corrected current generator also forms negative feedback to improve the line regulation and power supply rejection （PSR）. Measurement results show the proposed BGR achieves a maximum temperature coefficient （TC） of 21.2ppm/℃ without trimming in the temperature range of - 50-125℃ and a PSR of - 60dB at 2.6V supply voltage. The line regulation is 0.8mV/V in the supply range of 2.6-5.6V. It is successfully implemented in an SMIC 0.35μm 5V n-well digital CMOS process with the effective chip area of 0.04mm^2 and power con- sumption of 0.18mW. The reference is applied in a 3,5V optical receiver trans-impedance amplifier.提出了一种新型带有负反馈的分段曲率校正带隙电压基准源,该基准源的主要特色是利用温度相关的电阻比技术获得一个分段曲率校正电流,校正了一阶带隙基准源的非线性温度特性.该分段线性电流产生电路还形成了一个负反馈,以改善带隙基准源的电源抑制和线性调整率.测试结果表明:在2.6V电源电压下,该基准源在没有采用校正的条件下,在-50～125℃温度范围内实现了最大21.2ppm/℃温度系数,电源抑制比为-60dB.在2.6～5.6V电源电压下的线性调整率为0.8mV/V.采用中芯国际(SMIC)0.35μm 5Vn阱数字CMOS工艺成功实现,有效芯片面积0.04mm2,其总功耗为0.18mW.该基准源应用于3,5V兼容的光纤接收跨阻放大器.

关 键 词：piecewise curvature-corrected bandgap reference line regulation PSR temperature coefficient 

分 类 号：TN432[电子电信—微电子学与固体电子学]