低介电常数纯硅数分子筛薄膜的制备与表征  

Application of Ultraviolet Treatment on Synthesis of Pure-silica Zeolite Low Dielectric Constant Thin Films

作　　者：袁昊[1] 解丽丽[1] 田震[1] 王利军[1] 

机构地区：[1]上海第二工业大学城市建设与环境工程学院,上海201209

出　　处：《材料工程》2008年第10期110-113,共4页Journal of Materials Engineering

基　　金：上海市重点学科资助项目(P1701);上海市教育发展基金会资助项目(2007CG72)

摘　　要：介绍了一种制备具有低介电常数氧化硅分子筛薄膜的新方法。以正硅酸乙酯为硅源,四丙基氢氧化铵(TPAOH)为模板剂和碱源,采取水热晶化技术,通过原位法在硅晶片表面制备出纯二氧化硅透明分子筛薄膜;采用紫外光解法脱除分子筛薄膜孔道内的模板剂,制备出具有低介电性能的氧化硅分子筛薄膜。使用FT-IR,XRD和SEM对样品进行了结构表征,并采用阻抗分析仪测量了薄膜的介电常数,采用纳米硬度计测量薄膜的弹性模量和硬度。A novel photochemical approach was developed in the preparation of pure-silica zeolite thin films having low dielectric constants （ε）. Transparent pure-silica zeolite films were synthesized on sili- con wafers through hydrothermal reaction, in which tetraethylsilanoxide （TEOS） was used as silica source, tetrapropyl ammoniumoxide （TPAOH） as template and alkaline source. An ultraviolet treat- ment was subsequently applied to remove the organic templates within the pores/channels of zeolite films. The thin films were characterized by using FT-IR, XRD and SEM techniques before and after the ultraviolet treatment. FTIR results showed that the organic templates were effectively removed via ultraviolet treatment, which was the same as the results from the calcinations treatment. In com- parison with the calcined films, XRD and SEM results indicated that the crystallinity and the surface as well as the thickness of the films had no significant changes after ultraviolet treatment, e values of the thin films were measured by means of impedance analyzer. Elastic modulus and hardness of the thin films were measured by the nano-indentation technique. All results shown that the films after ul- traviolet treatment had a lower ε value and higher mechanical strength.

关 键 词：紫外光解法 有机模板剂 氧化硅分子筛薄膜 

分 类 号：O649[理学—物理化学]