半绝缘GaAs光电导开关亚皮秒传输特性的研究  

Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches

作　　者：贾婉丽[1] 施卫[1] 纪卫莉[1] 李孟霞[1] 

机构地区：[1]西安理工大学理学院,陕西西安710054

出　　处：《电子学报》2008年第9期1795-1799,共5页Acta Electronica Sinica

基　　金：国家自然科学基金(No.50477011);国家重点基础研究发展计划(973计划)基金(No.2007CB310406)

摘　　要：本文应用Ensemble-Monte Carlo方法模拟了半绝缘GaAs(SI-GaAs)光电导开关基于Auston等效电路亚皮秒传输特性.从载流子在开关体内的动态特性出发,研究了光电导开关在飞秒激光脉冲触发下光电导传输特性、电介质弛豫特性、开关储能特性以及开关工作模式;分析了非线性光电导开关对光能阈值和偏置电场阈值要求的物理机制.Ensemble Monte Carlo method is used to simulate the time-resolved transmission characteristic of Semi-Insulting GaAs （SI-GaAs） photoconductive switches based on ＂Auston＂ equivalent circuit model. According to the dynamic performance of photo-generated carriers in the semiconductor, we study the transmission characteristics, dielectric relaxation properties, energy storage specialty and work modes of photoconductive switches triggered by femto-second laser pulses and analyze the physical mechanism that the nonlinear photoconductive switches have the threshold of optical energy and electric bias field.

关 键 词：光电导开关 Ensemble-Monte CARLO方法 谷间散射 负阻效应 

分 类 号：TN29[电子电信—物理电子学]