nc-Si／SiNx超晶格薄膜实现Nd：YAG激光器调Q和锁模  

Passive Q-switching and Mode Locking of Pulsed Nd:YAG Laser with nc-Si/SiN_x Multilayer

作　　者：王国立[1] 郭亨群[1] 苏培林[1] 张春华[1] 王启明[2] 徐骏[3] 陈坤基[3] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021 [2]中国科学院半导体研究所,北京100083 [3]南京大学物理学系,江苏南京210093

出　　处：《发光学报》2008年第5期905-909,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60678053);国家自然科学基金重点(60336010);国家重点基础研究发展“973”计划(2007CB613401)资助项目

摘　　要：采用射频磁控反应溅射法制备a-Si/SiNx超晶格薄膜材料,热退火后形成纳米Si晶粒。把nc-Si/SiNx薄膜作为饱和吸收体插入Nd:YAG激光器腔内,在腔长较短时,实现1.06μm激光的被动调Q运转,获得最小脉宽23ns的调Q单脉冲输出,当腔长增加到124cm时,获得平均脉宽35ps的锁模脉冲序列。根据实验现象结合薄膜结构,分析了材料调Q与锁模的产生机制,并研究了不同工作条件下的调Q输出性能。The a-Si/SiNx supedattice was prepared by RF magnetron reaction sputtering technique and thermal annealing, which made Si nanocrystals appear in the a-Si films. In the experiment, the sample was inserted as saturable absorber into the resonator of Nd： YAG laser. The passive Q-switched operation of 1 064 nm laser was achieved when cavity-length was short, and a single pulse waveform of 23 ns-wide was measured. In addition, a single pulse train with average pulse duration of 35 ps was obtained when the cavity-length was set to 124 cm. With the experiment phenomenon and the structure of film, the dynamics of the pulses formation is described; it was mainly ascribed to two-photon saturable absorption and fast relaxation processes of carriers excited in the nano-silicon with quantized states and interface states. The Q-switched output performance in different operating conditions was investigated by the way.

关 键 词：激光技术 nc—Si/SiN 超晶格薄膜 调Q 锁模 射频磁控反应溅射 

分 类 号：TN248.1[电子电信—物理电子学] O484[理学—固体物理]