高性能快速启动CMOS带隙基准及过温保护电路  

Design of High Performance CMOS Bandgap Reference with over Temperature Protection Circuit

作　　者：季轻舟[1] 耿增建[1] 

机构地区：[1]西安微电子技术研究所,西安710054

出　　处：《科学技术与工程》2008年第21期5812-5816,共5页Science Technology and Engineering

摘　　要：设计了一种新颖的具有快速启动的高性能CMOS带隙基准,利用PN结正向导通压降具有负温度系数,偏置电路提供的偏置电流具有正温度系数,实现了过温保护。采用上华0.5μm的CMOS工艺模型进行设计和仿真,Cadence spectre模拟结果表明带隙基准电压为1.242 V。该电路温度系数低,电源抑制比高,启动速度快(启动时间仅10μs),过温保护性能良好。A high performance CMOS bandgap reference with quickly start-up circuit and over temperature protection circuit is presented, in which the principle of the biased current with positive temperature ceofficient and the PN junction with negative temperature coefficient has been utilized to realize the over temperature protection. By using 0.5μm CMOS process of shanghua, this reference was designed and simulated, Cadence spectre simulation results indicate that the output of reference voltage is 1. 242 V, it has lower temperature coefficient, high power supply rejection, and better performance of over temperature protection ,whose time of start-up is only 10μs.

关 键 词：带隙基准 快速启动 过温保护 电源抑制比 

分 类 号：TN492[电子电信—微电子学与固体电子学]