低温GaAs被动调Q锁模Nd：GdYVO_4激光器的实验研究  

Study of Passive Mode Locking of a Diode-pumped Nd:GdYVO_4 Laser with a LT-GaAs

作　　者：戴巍[1] 李德川[1] 王明建[1] 张帅一[1] 于国蕾[1] 李健[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《红外》2008年第10期34-37,共4页Infrared

摘　　要：采用低温生长的GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd:GdYVO_4激光器调Q锁模运转。研究了Nd:GdYVO_4激光器的基频运转特性及调Q锁模输出特性。实验结果表明,当用平面镜作为输出镜及泵浦功率为10W时,获得激光的输出功率是3.5W,光-光转换效率是35%;当用GaAs作为输出镜时,激光器调Q运转阈值是1.2W,而当泵浦功率是10W时,输出功率是1.88W,锁模脉冲的重复频率为114MHz。激光调Q锁模深度在7W时达到100%。泵浦功率为8W时,输出功率为1.58W,调Q包络脉冲的重复频率为91kHz,半峰全宽为43.2ns。By using a piece of GaAs crystal grown at low temperature as a passively saturated absorber as well as a output coupler, a passively Q-switched mode-locking Nd ： GdYVO4 laser is demonstrated. The fundamental frequency and Q-switched output properties of the Nd ： GdYVO4 laser are studied. The experimental results show that when a planar mirror is used as the output mirror and the incident pumping power is 10W, the output power of 3.5W and the optical-optical conversion efficiency of 35% can be obtained; when GaAs is used as the output mirror, the threshold power for Q-switching mode-locked is 1.2W; and when the incident pumping power is 10W, the output power of 1.88W and the mode-locked pulse train with a repetition rate of ll4MHz can be obtained. At the incident pumping power of 7W, the modulation depth of the Q-switching mode-locking pulse is up to 100%; at the incident pumping power of 8W, the output power of 1.58W, the Q-switched envelope pulse train with a repetition rate of 91kHz and the full width at half maximum （FWHM） of 43.2nm can be obtained.

关 键 词：激光器 Nd:GdYVO4 低温GaAs晶体 调Q锁模 

分 类 号：TN248.1[电子电信—物理电子学]