一种基于CMOS的红外接收芯片的分析与设计  

Analysis and Design of an Infrared Receiver Chip Based on CMOS Process

作　　者：杨鹏[1] 

机构地区：[1]重庆邮电大学

出　　处：《红外》2008年第10期38-41,共4页Infrared

摘　　要：分析了红外接收芯片的原理,对主要模块提出了较新颖的实现电路。采用上华0.5μm CMOS工艺对整个电路进行了仿真,电源电流仅为0.8mA,实现了低功耗,最小脉冲宽度为6个脉冲,最小脉冲间隔为10个脉冲,指标均高于市场同类产品。In this paper, the principle of an infrared receiver chip is analyzed and a novel circuit is proposed for the main module. The circuit is simulated by using a 0.5μm CMOS process. The circuit is low in power consumption. It has the source current of only 0.8mA, the minimum burst length of 6 pulses and the minimum burst gap time of 10 pulses. Its specifications are all better than those of the same products on the market.

关 键 词：红外接收 带通滤波器 线性度 

分 类 号：TN492[电子电信—微电子学与固体电子学]